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SA58670
2.1 W/channel stereo Class D audio amplifier
Rev. 01 -- 22 June 2007 Objective data sheet
1. General description
The SA58670 is a stereo, filter-free Class D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The SA58670 features independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB utilizing G0 and G1 gain select pins. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package, makes it an ideal choice for both cellular handsets and PDAs. The SA58670 delivers 1.4 W/channel at 5 V and 720 mW/channel at 3.6 V into 8 . It delivers 2.1 W/channel at 5 V into 4 . The maximum power efficiency is excellent at 70 % to 74 % into 4 and 84 % to 88 % into 8 . The SA58670 provides thermal and short circuit shutdown protection.
2. Features
Output power 2.1 W/channel into 4 at 5 V 1.4 W/channel into 8 at 5 V 720 mW/channel into 8 at 3.6 V Power supply range: 2.5 V to 5.5 V Independent shutdown control for each channel Selectable gain of 6 dB, 12 dB, 18 dB and 24 dB High PSSR: 77 dB at 217 Hz Fast start-up time of 3.5 ms Low supply current Low shutdown current Short-circuit and thermal protection Space savings with 4 mm x 4 mm HVQFN20 package Low junction to ambient thermal resistance of 24 K/W with exposed die attach paddle
3. Applications
Wireless and cellular handsets and PDAs Portable DVD player USB speakers Notebook PC Portable radio and gaming
NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
Educational toys
4. Ordering information
Table 1. Ordering information Package Name SA58670BS HVQFN20 Description plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm Version SOT917-1 Type number
5. Block diagram
SA58670
VDD
to battery
right input
INRP INRN
OUTRP GAIN ADJUST PWM H- BRIDGE OUTRN
INTERNAL OSCILLATOR
GND
left input
INLP INLN
OUTLP GAIN ADJUST PWM H- BRIDGE OUTLN
G0 G1 SDR
300 k
BIAS CIRCUITRY
SHORT-CIRCUIT PROTECTION
SDL
300 k
002aac765
Refer to Table 6 for gain selection.
Fig 1. Block diagram
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
6. Pinning information
6.1 Pinning
18 AGND 17 INRN 16 INRP 15 G0 14 OUTRP 13 PVDD 12 PGND 11 OUTRN n.c. 10 6 7 8 SDR 9 AVDD 19 INLN SDL 20 INLP 1 2 3 4 5
(1)
terminal 1 index area
G1 OUTLP PVDD PGND OUTLN
SA58670BS
n.c.
002aac766
Transparent top view
(1) Exposed DAP.
Fig 2. Pin configuration for HVQFN20
6.2 Pin description
Table 2. Symbol G1 OUTLP PVDD PGND OUTLN n.c. SDL SDR AVDD OUTRN OUTRP G0 INRP INRN AGND INLN INLP Pin description Pin 1 2 3, 13 4, 12 5 6, 10 7 8 9 11 14 15 16 17 18 19 20 (DAP) Description gain select (MSB) left channel positive output power supply (level same as AVDD) power ground left channel negative output not connected left channel shutdown (active LOW) right channel shutdown (active LOW) analog supply (level same as PVDD) right channel negative output right channel positive output gain select (LSB) right channel positive input right channel negative input analog ground left channel negative input left channel positive input exposed die attach paddle; connect to ground plane heat spreader
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
7. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDD VI Ptot P Parameter supply voltage input voltage total power dissipation power dissipation continuous derating factor 41.6 mW/C Tamb = 25 C Tamb = 75 C Tamb = 85 C Tamb Tj Tstg ESD ESD VSD(max) ambient temperature junction temperature storage temperature Human body model Machine model Shutdown pin voltage maximum voltage operating in free air operating -40 -40 -65 2 200 GND VDD 5.2 3.12 2.7 +85 +150 +85 W W W C C C kV V V Conditions active mode shutdown mode Min -0.3 -0.3 -0.3 Max +6.0 +7.0 VDD + 0.3 Unit V V V W
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
8. Static characteristics
Table 4. Static characteristics Tamb = 25 C, unless otherwise specified. Symbol |VO(offset)| Parameter output offset voltage Conditions Min Typ 5 Max 10 Unit mV measured differentially; inputs AC grounded; Gv = 6 dB; VDD = 2.5 V to 5.5 V VDD = 2.5 V to 5.5 V inputs are shorted together; VDD = 2.5 V to 5.5 V VDD = 5.5 V; VI = VDD VDD = 5.5 V; VI = 0 V VDD = 5.5 V; no load VDD = 3.6 V; no load VDD = 2.5 V; no load ISD VSD RDSon shutdown current shutdown voltage input drain-source on-state resistance no input signal, VSD = GND device ON device OFF static; VDD = 5.5 V static; VDD = 3.6 V static; VDD = 2.5 V Zo(sd) fsw Gv(cl) shutdown mode output impedance switching frequency closed-loop voltage gain VSDR, VSDL = 0.35 V VDD = 2.5 V to 5.5 V G0, G1 = 0.35 V G0 = VDD; G1 = 0.35 V G0 = 0.35 V; G1 = VDD G0 = VDD; G1 = VDD GND 250 5.5 11.5 17.5 23.5 500 570 700 2 300 6 12 18 24 0.5 -
PSRR Vi(cm) CMRR IIH IIL IDD
power supply rejection ratio common-mode input voltage common mode rejection ratio HIGH-level input current LOW-level input current supply current
-75 -69 6 5 4 10 VDD/2
-55 VDD - 0.8 -50 50 5 9 7.5 6 1000 0.4 350 6.5 12.5 18.5 24.5
dB V dB A A mA mA mA nA V V m m m k kHz dB dB dB dB
SA58670_1
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
9. Dynamic characteristics
Table 5. Dynamic characteristics Tamb = 25 C; RL = 8 ; unless otherwise specified. Symbol Po Parameter output power Conditions per channel; f = 1 kHz; THD+N = 10 % RL = 8 ; VDD = 5.0 V RL = 8 ; VDD = 3.6 V RL = 4 ; VDD = 5.0 V THD+N total harmonic distortion-plus-noise VDD = 5 V; Gv = 6 dB; f = 1 kHz Po = 1 W Po = 0.5 W SVRR supply voltage ripple rejection Gv = 6 dB; f = 217 Hz VDD = 5 V VDD = 3.6 V CMRR Zi common mode rejection ratio input impedance VDD = 5 V; Gv = 6 dB; f = 217 Hz Gv = 6 dB Gv = 12 dB Gv = 18 dB Gv = 24 dB td(sd-startup) Vn(o) delay time from shutdown to start-up noise output voltage VDD = 3.6 V VDD = 3.6 V; f = 20 Hz to 20 kHz; inputs are AC grounded no weighting A weighting 35 27 V V -77 -73 -69 28.1 17.3 9.8 5.2 3.5 dB dB dB k k k k ms 0.14 0.11 % % 1.4 0.72 2.1 W W W Min Typ Max Unit
SA58670_1
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Objective data sheet
Rev. 01 -- 22 June 2007
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SA58670
2.1 W/channel stereo Class D audio amplifier
10. Typical performance curves
002aac767 002aac768
100 THD+N (%)
(1) (2)
100 THD+N (%)
(1) (2)
10
10
1
1
0.1 0.01
0.1
1 Po (W)
10
0.1 0.01
0.1
1 Po (W)
10
(1) VDD = 3.6 V; RL = 4 ; f = 1 kHz; Gv = 24 dB (2) VDD = 5 V; RL = 4 ; f = 1 kHz; Gv = 24 dB
(1) VDD = 3.6 V; RL = 8 ; f = 1 kHz; Gv = 24 dB (2) VDD = 5 V; RL = 8 ; f = 1 kHz; Gv = 24 dB
a. 4 load Fig 3. THD+N versus output power
b. 8 load
-60 crosstalk (dB) -80 SA58670, ch 1 SA58670, ch 2
002aac769
-100 ch 1 ch 2
-120 2k
3k
4k
5k
6k
7k
8 k 9 k 10 k crosstalk (Hz)
20 k
Fig 4. Stepped all-to-one crosstalk
SA58670_1
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Objective data sheet
Rev. 01 -- 22 June 2007
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SA58670
2.1 W/channel stereo Class D audio amplifier
-30 distortion product ratio (dB) -50 SA58670, ch 1
002aac770
-70
SA58670, ch2 -90
-110
20
30
50
100
200 300
500
1k
2k
3k
5k
20 k 10 k f (Hz)
Fig 5. Stepped distortion product ratio
1m Vn(o)(RMS) (V)
002aac771
100
(1) (2)
10
1
20
30
50
100
200 300
500
1k
2k
3k
5k
10 k 20 k f (Hz)
(1) Left channel. (2) Right channel.
Fig 6. Noise output voltage
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
11. Application information
11.1 Power supply decoupling considerations
The SA58670 is a stereo Class D audio amplifier that requires proper power supply decoupling to ensure the rated performance for THD+N and power efficiency. To decouple high frequency transients, power supply spikes and digital noise on the power bus line, a low Equivalent Series Resistance (ESR) capacitor, of typically 1 F is placed as close as possible to the PVDD terminals of the device. It is important to place the decoupling capacitor at the power pins of the device because any resistance or inductance in the PCB trace between the device and the capacitor can cause a loss in efficiency. Additional decoupling using a larger capacitor, 4.7 F or greater may be done on the power supply connection on the PCB to filter low frequency signals. Usually this is not required due to high PSRR of the device.
11.2 Input capacitor selection
The SA58670 does not require input coupling capacitors when used with a differential audio source that is biased from 0.5 V to VDD - 0.8 V. In other words, the input signal must be biased within the common-mode input voltage range. If high pass filtering is required or if it is driven using a single-ended source, input coupling capacitors are required. The high pass corner frequency created by the input coupling capacitor and the input resistors (see Table 6) is calculated by Equation 1: 1 f C = ----------------------------2 x R i x C i
Table 6. G1 0 0 1 1 Gain selection G0 0 1 0 1 Gain (V/V) 2 4 8 16 Gain (dB) 6 12 18 24 Input impedance (k) 28.1 17.3 9.8 5.2
(1)
Since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio amplifier, it is important to consider in the system design. Small speakers in wireless and cellular phones usually do not respond well to low frequency signals, so the high pass corner frequency may be increased to block the low frequency signals to the speakers. Not using input coupling capacitors may increase the output offset voltage. Equation 1 is solved for Ci: 1 C i = ---------------------------2 x R i x f C (2)
SA58670_1
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
11.3 PCB layout considerations
Component location is very important for performance of the SA58670. Place all external components very close to the device. Placing decoupling capacitors directly at the power supply pins increases efficiency because the resistance and inductance in the trace between the device power supply pins and the decoupling capacitor causes a loss in power efficiency. The trace width and routing are also very important for power output and noise considerations. For high current terminals (PVDD, PGND and audio output), the trace widths should be maximized to ensure proper performance and output power. Use at least 500 m wide traces. For the input pins (INRP/INRN and INLP/INLN), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation.
11.4 Filter-free operation and ferrite bead filters
A ferrite bead low-pass filter can be used to reduce radio frequency emissions in applications that have circuits sensitive to greater than 1 MHz. A ferrite bead low-pass filter functions well for amplifiers that must pass FCC unintentional radiation requirements at greater than 30 MHz. Choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. In order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. For applications in which there are circuits that are EMI sensitive to low frequency (<1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC output filter.
11.5 Efficiency and thermal considerations
The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In Table 3 "Limiting values", power dissipation, the power derating factor is given as 41.6 mW/C. The device thermal resistance, Rth(j-a) is the reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by the following equation: 1 1 R th ( j-a ) = ---------------------------------------- = --------------- = 24 C/W derating factor 0.0413 (3)
For a maximum allowable junction temperature, Tj = 150 C and Rth(j-a) = 24 C/W and a maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel output power, 4 load, 5 V supply, the maximum ambient temperature is calculated using Equation 4: T amb ( max ) = T j ( max ) - ( R th ( j-a ) x P D ( max ) ) = 150 - ( 24 x 1.5 ) = 114 C (4)
The maximum ambient temperature is 114 C at maximum power dissipation for 5 V supply and 4 load. If the junction temperature of the SA58670 rises above 150 C, the thermal protection circuitry turns the device off; this prevents damage to IC. Using speakers greater than 4 further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency.
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
11.6 Additional thermal information
The SA58670 HVQFN20 package incorporates an exposed die attach paddle (DAP) that is designed to solder mount directly to the PCB heat spreader. By the use of thermal vias, the DAP may be soldered directly to a ground plane or special heat sinking layer designed into the PCB. The thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lowest package thermal resistance.
SA58670_1
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
12. Package outline
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads; 20 terminals; body 4 x 4 x 0.85 mm
SOT917-1
D
B
A
terminal 1 index area E A A1 c
detail X
e1 e 6 L 11 5 Eh 1 15 e e2 b 10 vMCAB wMC y1 C
C y
terminal 1 index area
20 Dh
16 X
0 DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max. 1 A1 0.05 0.00 b 0.30 0.18 c 0.2 D(1) 4.1 3.9 Dh 2.45 2.15 E(1) 4.1 3.9 Eh 2.45 2.15 e 0.5
2.5 scale
5 mm
e1 2
e2 2
L 0.6 0.4
v 0.1
w 0.05
y 0.05
y1 0.1
Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT917 -1 REFERENCES IEC --JEDEC MO-220 JEITA --EUROPEAN PROJECTION ISSUE DATE 05-10-08 05-10-31
Fig 7. Package outline SOT917-1 (HVQFN20)
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Objective data sheet
Rev. 01 -- 22 June 2007
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SA58670
2.1 W/channel stereo Class D audio amplifier
13. Soldering
This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 "Surface mount reflow soldering description".
13.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization.
13.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following:
* Through-hole components * Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable. Key characteristics in both wave and reflow soldering are:
* * * * * *
Board specifications, including the board finish, solder masks and vias Package footprints, including solder thieves and orientation The moisture sensitivity level of the packages Package placement Inspection and repair Lead-free soldering versus PbSn soldering
13.3 Wave soldering
Key characteristics in wave soldering are:
* Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are exposed to the wave
* Solder bath specifications, including temperature and impurities
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Objective data sheet
Rev. 01 -- 22 June 2007
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
13.4 Reflow soldering
Key characteristics in reflow soldering are:
* Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 8) than a PbSn process, thus reducing the process window
* Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
* Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table 7 and 8
Table 7. SnPb eutectic process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 2.5 2.5 Table 8. 235 220 Lead-free process (from J-STD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 1.6 1.6 to 2.5 > 2.5 260 260 250 350 to 2000 260 250 245 > 2000 260 245 245 350 220 220
Package thickness (mm)
Package thickness (mm)
Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure 8.
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Objective data sheet
Rev. 01 -- 22 June 2007
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SA58670
2.1 W/channel stereo Class D audio amplifier
temperature
maximum peak temperature = MSL limit, damage level
minimum peak temperature = minimum soldering temperature
peak temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 8. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365 "Surface mount reflow soldering description".
14. Abbreviations
Table 9. Acronym DAP DVD EMI ESR FCC LC LSB MSB PC PCB PDA PWM USB Abbreviations Description Die Attach Paddle Digital Video Disc ElectroMagnetic Interference Equivalent Series Resistance Federal Communications Commission inductor-capacitor filter Least Significant Bit Most Significant Bit Personal Computer Printed-Circuit Board Personal Digital Assistant Pulse Width Modulator Universal Serial Bus
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Objective data sheet
Rev. 01 -- 22 June 2007
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SA58670
2.1 W/channel stereo Class D audio amplifier
15. Revision history
Table 10. Revision history Release date 20070622 Data sheet status Objective data sheet Change notice Supersedes Document ID SA58670_1
SA58670_1
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Objective data sheet
Rev. 01 -- 22 June 2007
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SA58670
2.1 W/channel stereo Class D audio amplifier
16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
16.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
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(c) NXP B.V. 2007. All rights reserved.
Objective data sheet
Rev. 01 -- 22 June 2007
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SA58670
2.1 W/channel stereo Class D audio amplifier
18. Contents
1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 11.1 11.2 11.3 11.4 11.5 11.6 12 13 13.1 13.2 13.3 13.4 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Typical performance curves . . . . . . . . . . . . . . . 7 Application information. . . . . . . . . . . . . . . . . . . 9 Power supply decoupling considerations . . . . . 9 Input capacitor selection . . . . . . . . . . . . . . . . . . 9 PCB layout considerations . . . . . . . . . . . . . . . 10 Filter-free operation and ferrite bead filters. . . 10 Efficiency and thermal considerations . . . . . . 10 Additional thermal information . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Introduction to soldering . . . . . . . . . . . . . . . . . 13 Wave and reflow soldering . . . . . . . . . . . . . . . 13 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 13 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 June 2007 Document identifier: SA58670_1

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